Transistor (BJT) (1582020)

Basic Attributes

• DC current gain hFE - reference current(µA)

  • -10
  • 10

  Clear

• Collector current(mA)

  • -800
  • -100
  • 100
  • 500
  • 800

  Clear

• Collector-emitter saturation voltage (max.)(mV)

  • -650
  • -500
  • 500
  • 600
  • 700

  Clear

• Collector cutoff current(nA)

  • -250
  • -15
  • 15
  • 100

  Clear

• Collector emitter voltage U(CEO)(V)

  • -300
  • -65
  • -45
  • -30
  • 30
  • 45
  • 65
  • 300

  Clear

• DC current gain (hFE)

  • 25
  • 90
  • 100
  • 150
  • 270

  Clear

• DC current gain hFE - reference current(mA)

  • -1
  • 1
  • 300

  Clear

• DC current gain hFE - reference voltage(V)

  • -10
  • -5
  • 1
  • 5
  • 10

  Clear

• Power (max) P(TOT)(mW)

  • 500
  • 625

  Clear

• Transit frequency f(T)(MHz)

  • 50
  • 70
  • 100
  • 150
  • 300

  Clear

• Type (manufacturer type)

  • TC-mpsa 42
  • TC-mpsa 92
  • TC-BC 337-25
  • TC-BC 546 B
  • TC-BC 547 A
  • TC-BC 547 B
  • TC-BC 548 C
  • TC-BC549C
  • TC-BC 556 B
  • TC-BC557C
  • TC-BC559C

  Clear

• Type (transistors)

  • NPN
  • PNP

  Clear